STS1DNC45 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STS1DNC45
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حجم فایل
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72.942
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STS1DNC45
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
1.6W
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Total Gate Charge (Qg@Vgs):
10nC@10V
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Drain Source Voltage (Vdss):
450V
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Input Capacitance (Ciss@Vds):
160pF@25V
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Continuous Drain Current (Id):
400mA
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Gate Threshold Voltage (Vgs(th)@Id):
3.7V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
4.7pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
4.1Ω@10V,500mA
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Package:
SOP-8
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Manufacturer:
STMicroelectronics
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Series:
SuperMESH™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Standard
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Drain to Source Voltage (Vdss):
450V
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Current - Continuous Drain (Id) @ 25°C:
400mA
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Rds On (Max) @ Id, Vgs:
4.5Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
3.7V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
160pF @ 25V
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Power - Max:
1.6W
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SO
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Base Part Number:
STS1D
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detail:
Mosfet Array 2 N-Channel (Dual) 450V 400mA 1.6W Surface Mount 8-SO
